參數(shù)資料
型號: PIC16F627T-20E/SO
廠商: Microchip Technology
文件頁數(shù): 38/170頁
文件大?。?/td> 0K
描述: IC MCU FLASH 1KX14 18-SOIC
標(biāo)準(zhǔn)包裝: 1,100
系列: PIC® 16F
核心處理器: PIC
芯體尺寸: 8-位
速度: 20MHz
連通性: UART/USART
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 16
程序存儲器容量: 1.75KB(1K x 14)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 128 x 8
RAM 容量: 224 x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 5.5 V
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 125°C
封裝/外殼: 18-SOIC(0.295",7.50mm 寬)
包裝: 帶卷 (TR)
PIC16F62X
DS40300C-page 130
Preliminary
2003 Microchip Technology Inc.
17.1
DC Characteristics: PIC16F62X-04 (Commercial, Industrial, Extended)
PIC16F62X-20 (Commercial, Industrial, Extended)
PIC16LF62X-04 (Commercial, Industrial)
PIC16LF62X-04
(Commercial, Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40
°C ≤ Ta ≤ +85°C for industrial and
0
°C ≤ Ta ≤ +70°C for commercial
PIC16F62X-04
PIC16F62X-20
(Commercial, Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40
°C ≤ Ta ≤ +85°C for industrial and
0
°C ≤ Ta ≤ +70°C for commercial and
-40
°C ≤ Ta ≤ +125°C for extended
Param
No.
Sym
Characteristic/Device
Min
Typ
Max
Units
Conditions
V
DD
Supply Voltage
D001
PIC16LF62X
2.0
5.5
V
D001
PIC16F62X
3.0
5.5
V
D002
V
DR
RAM Data Retention
Voltage(1)
1.5
V
Device in SLEEP mode*
D003
V
POR
V
DD Start Voltage
to ensure Power-on Reset
—V
SS
V
See section on Power-on Reset
for details
D004
S
VDD
V
DD Rise Rate
to ensure Power-on Reset
0.05
V/ms
See section on Power-on Reset
for details*
D005
V
BOD
Brown-out Detect Voltage
3.65
4.0
4.35
4.4
V
BODEN configuration bit is set
BODEN configuration bit is set,
Extended
D010
D013
I
DD
Supply Current(2), (5)
PIC16LF62X
0.30
1.10
4.0
3.80
20
0.6
2.0
7.0
6.0
2.0
30
mA
A
Fosc = 4.0 MHz, V
DD = 2.0(5)
F
OSC = 4.0 MHz, VDD = 5.5*
Fosc = 20.0 MHz, V
DD = 5.5
Fosc = 20.0 MHz, V
DD = 4.5*
F
OSC = 10.0 MHz, VDD = 3.0(6)
F
OSC = 32 kHz, VDD = 2.0
D010
D013
D014
PIC16F62X
0.60
1.10
4.0
3.80
20
0.7
2.0
7.0
6.0
2.0
30
mA
A
Fosc = 4.0 MHz, V
DD = 3.0
Fosc = 4.0 MHz, V
DD = 5.5*
F
OSC = 20.0 MHz, VDD = 5.5
F
OSC = 20.0 MHz, VDD = 4.5*
F
OSC = 10.0 MHz, VDD = 3.0*(6)
F
OSC = 32 kHz, VDD = 3.0*
Legend: Rows with standard voltage device data only are shaded for improved readability.
*
These parameters are characterized but not tested.
Data in “Typ” column is at 5.0V, 25
°C, unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note
1: This is the limit to which V
DD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-
sumption.
The test conditions for all I
DD measurements in active Operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to V
DD,
MCLR = V
DD; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is measured with
the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD or VSS.
4: The
current is the additional current consumed when this peripheral is enabled. This current should be added to the
base I
DD or IPD measurement.
5: For RC osc configuration, current through R
EXT is not included. The current through the resistor can be estimated by the
formula Ir = V
DD/2REXT (mA) with REXT in k
.
6: Commercial temperature only.
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