MCP2510
DS21291F-page 62
2007 Microchip Technology Inc.
TABLE 12-1:
DC CHARACTERISTICS
DC Characteristics
Industrial (I):
TAMB = -40掳C to +85掳C
VDD = 3.0V to 5.5V
Extended (E):
TAMB = -40掳C to +125掳C
VDD = 4.5V to 5.5V
Param.
No.
Sym
Characteristic
Min
Max
Units
Conditions
VDD
Supply Voltage
3.0
5.5
V
VRET
Register Retention Voltage
2.4
鈥�
V
High Level Input Voltage
VIH
RXCAN
2
VDD+1
V
SCK, CS, SI, TXnRTS Pins
.7 VDD
VDD+1
V
OSC1
.85 VDD
VDD
V
RESET
.85 VDD
VDD
V
Low Level Input Voltage
VIL
RXCAN,TXnRTS Pins
-0.3
.15 VDD
V
SCK, CS, SI
-0.3
0.4
V
OSC1
VSS
.3 VDD
V
RESET
VSS
.15 VDD
V
Low Level Output Voltage
VOL
TXCAN
鈥�
0.6
V
IOL = -6.0 mA, VDD = 4.5V
RXnBF Pins
鈥�
0.6
V
IOL = -8.5 mA, VDD = 4.5V
SO, CLKOUT
鈥�
0.6
V
IOL = -2.1 mA, VDD = 4.5V
INT
鈥�0.6
V
IOL = -1.6 mA, VDD = 4.5V
High Level Output Voltage
V
VOH
TXCAN, RXnBF Pins
VDD -0.7
鈥�
V
IOH = 3.0 mA, VDD = 4.5V, I temp
SO, CLKOUT
VDD -0.5
鈥�
V
IOH = 400 A, VDD = 4.5V
INT
VDD -0.7
鈥�
V
IOH = 1.0 mA, VDD = 4.5V
Input Leakage Current
ILI
All I/O except OSC1 and
TXnRTS pins
-1
+1
A
CS = RESET = VDD,
VIN = VSS to VDD
OSC1 Pin
-5
+5
A
CINT
Internal Capacitance
(All Inputs And Outputs)
鈥�7
pF
TAMB = 25掳C, fC = 1.0 MHz,
IDD
Operating Current
鈥�
10
mA
VDD = 5.5V, FOSC = 25 MHz,
FCLK = 1 MHz, SO = Open
IDDS
Standby Current (Sleep Mode)
鈥�
5
A
CS, TXnRTS = VDD, Inputs tied to
VDD or VSS
Note:
This parameter is periodically sampled and not 100% tested.
