參數(shù)資料
    型號： PIC12LC508AT-04/SN
    廠商： Microchip Technology
    文件頁數(shù)： 77/113頁
    文件大小： 0K
    描述： IC MCU OTP 512X12 LV 8SOIC
    產(chǎn)品培訓(xùn)模塊： Asynchronous Stimulus
    標準包裝： 3,300
    系列： PIC® 12C
    核心處理器： PIC
    芯體尺寸： 8-位
    速度： 4MHz
    外圍設(shè)備： POR，WDT
    輸入/輸出數(shù)： 5
    程序存儲器容量： 768B（512 x 12）
    程序存儲器類型： OTP
    RAM 容量： 25 x 8
    電壓 - 電源 (Vcc/Vdd)： 2.5 V ~ 5.5 V
    振蕩器型： 內(nèi)部
    工作溫度： 0°C ~ 70°C
    封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
    包裝： 帶卷 (TR)
    其它名稱： PIC12LC508AT-04SN
    PIC12C5XX
    DS40139E-page 66
    1999 Microchip Technology Inc.
    11.1
    DC CHARACTERISTICS:
    PIC12C508/509 (Commercial, Industrial, Extended)
    DC Characteristics
    Power Supply Pins
    Standard Operating Conditions (unless otherwise specified)
    Operating Temperature
    0
    °C ≤ TA ≤ +70°C (commercial)
    –40
    °C ≤ TA ≤ +85°C (industrial)
    –40
    °C ≤ TA ≤ +125°C (extended)
    Parm
    No.
    Characteristic
    Sym
    Min
    Typ(1)
    Max
    Units
    Conditions
    D001
    Supply Voltage
    VDD
    2.5
    3.0
    5.5
    V
    FOSC = DC to 4 MHz (Commercial/
    Industrial)
    FOSC = DC to 4 MHz (Extended)
    D002
    RAM Data Retention
    Voltage(2)
    VDR
    1.5*
    V
    Device in SLEEP mode
    D003
    VDD Start Voltage to
    ensure Power-on Reset
    VPOR
    VSS
    V
    See section on Power-on Reset for details
    D004
    VDD Rise Rate to ensure
    Power-on Reset
    SVDD
    0.05
    *
    V/ms
    See section on Power-on Reset for details
    D010
    D010C
    D010A
    Supply Current(3)
    IDD
    —
    .78
    1.1
    10
    14
    2.4
    27
    35
    mA
    A
    XT and EXTRC options (4)
    FOSC = 4 MHz, VDD = 5.5V
    INTRC Option
    FOSC = 4 MHz, VDD = 5.5V
    LP OPTION, Commercial Temperature
    FOSC = 32 kHz, VDD = 3.0V, WDT disabled
    LP OPTION, Industrial Temperature
    FOSC = 32 kHz, VDD = 3.0V, WDT disabled
    LP OPTION, Extended Temperature
    FOSC = 32 kHz, VDD = 3.0V, WDT disabled
    D020
    D021
    D021B
    Power-Down Current (5)
    IPD
    —
    0.25
    2
    4
    5
    18
    A
    VDD = 3.0V, Commercial WDT disabled
    VDD = 3.0V, Industrial WDT disabled
    VDD = 3.0V, Extended WDT disabled
    D022
    IWDT —
    —
    3.75
    8
    9
    14
    A
    VDD = 3.0V, Commercial
    VDD = 3.0V, Industrial
    VDD = 3.0V, Extended
    * These parameters are characterized but not tested.
    Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25
    °C. This data is for design
    guidance only and is not tested.
    2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
    3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as
    bus loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an
    impact on the current consumption.
    a) The test conditions for all IDD measurements in active operation mode are:
    OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to
    Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.
    b) For standby current measurements, the conditions are the same, except that
    the device is in SLEEP mode.
    4: Does not include current through Rext. The current through the resistor can be estimated by the
    formula: IR = VDD/2Rext (mA) with Rext in kOhm.
    5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current
    is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or
    VSS.
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