參數(shù)資料
型號: PI0512WS
英文描述: 512-Pixel 50-mm-Pitch Wide Aperture Spectroscopic Photodiode Array
中文描述: 512像素50毫米間距寬孔徑光譜二極管陣列
文件頁數(shù): 3/8頁
文件大?。?/td> 604K
代理商: PI0512WS
PI0512WS Page 3 of 8 – July 26, 2001
During normal operation, the impinging photons in or near the PN photodiode junction
generate free charges that are collected and stored on the junction's depletion capacitance.
Since on average a certain fraction of charge is generated and collected for each impinging
photon, the number of collected charges will proportionally increase with light exposures.
Figure 3 shows the stored signal charge as function of light exposure at a wavelength of
575 nm. The exposure is the product of the light intensity in nW/cm
2
and integration time in
seconds. The charge accumulates linearly until reaching the saturation charge where the
corresponding exposure is the saturation exposure.
0
10
20
30
40
50
60
70
0
50
100
150
200
Exposure (nJ/cm^2)
O
Saturation
Charge
Saturation
Exposure
Figure 3. Stored signal charge as function of exposure at a wavele of 575 nm.
The responsivity is defined as ratio of saturation charge divided by saturation exposure. The
measured typical responsivity of a photodiode is 3.3
×
10
-4
C/J/cm
2
at 575 nm. Figure 4 shows
the predicted responsivity of the photodiodes as a function of wavelength.
0.0E+00
5.0E-05
1.0E-04
1.5E-04
2.0E-04
2.5E-04
3.0E-04
3.5E-04
4.0E-04
4.5E-04
5.0E-04
100
300
500
700
900
Wavelength (nm)
R
QE=20%
QE=40%
QE=60%
QE=80%
Figure 4. Predicted spectral response.
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