參數(shù)資料
型號(hào)： PHX8ND50E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistors FREDFET, Avalanche energy rated
中文描述： 4.2 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 61K
代理商： PHX8ND50E
Philips Semiconductors
Product specification
PowerMOS transistors
FREDFET, Avalanche energy rated
PHX8ND50E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 6.2 A;
t
p
= 0.18 ms; T
j
prior to avalanche = 25C;
V
≤
50 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:17
MIN.
-
MAX.
510
UNIT
mJ
E
AR
Repetitive avalanche energy
1
I
= 8.5 A; t
= 1
μ
s; T
prior to
-
19
mJ
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V;
refer to fig:18
I
AS
, I
AR
Repetitive and non-repetitive
avalanche current
-
8.5
A
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-hs
Thermal resistance junction
to heatsink
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP. MAX. UNIT
-
3.4
K/W
-
55
-
K/W
1
pulse width and repetition rate limited by T
j
max.
August 1998
2
Rev 1.100
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