參數資料
型號： PHX7N60E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistors Avalanche energy rated
中文描述： 3.6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝： FULL PACK-3
文件頁數： 1/8頁
文件大?。?/td> 76K
代理商： PHX7N60E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX7N60E
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Stable off-state characteristics
High thermal cycling performance
Isolated package
V
DSS
= 600 V
I
D
= 3.6 A
R
DS(ON)
≤
1.2
GENERAL DESCRIPTION
PINNING
SOT186A
N-channel,
field-effect
intendedfor use in off-lineswitched
mode power supplies, T.V. and
computer monitor power supplies,
d.c.tod.c.converters,motorcontrol
circuits
and
general
switching applications.
enhancement
power
mode
PIN
DESCRIPTION
transistor,
1
gate
2
drain
purpose
3
source
case
isolated
The PHX7N60E is supplied in the
SOT186A
full
package.
pack,
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
±
30
3.6
2.3
28
37
150
UNIT
V
V
V
A
A
A
W
C
T
hs
= 25 C; V
GS
= 10 V
T
hs
= 100 C; V
GS
= 10 V
T
hs
= 25 C
T
hs
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 6.5 A;
t
p
= 0.23 ms; T
j
prior to avalanche = 25C;
V
≤
50 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:17
MIN.
-
MAX.
583
UNIT
mJ
E
AR
Repetitive avalanche energy
1
I
= 7 A; t
= 2.5
μ
s; T
prior to
-
13
mJ
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V;
refer to fig:18
I
AS
, I
AR
Repetitive and non-repetitive
avalanche current
-
7
A
d
g
s
1 2 3
case
1
pulse width and repetition rate limited by T
j
max.
December 1998
1
Rev 1.400
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PHX8NQ11T,127 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX9NQ20T 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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