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參數(shù)資料
| 型號： | PHT8N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場效應(yīng)管) |
| 中文描述： | 3.5 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 72K |
| 代理商： | PHT8N06T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHT8N06T
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope suitable for surface
mounting. Using
’trench’
technolgy
thedevice features very low on-state
resistance and has integral zener
diodes giving ESD protection. It is
intended
for
use
converters and
switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current
Total power dissipation
Junction temperature
Drain-source on-state
resistance
55
7.5
1.8
150
80
V
A
W
C
m
in
DC-DC
V
GS
= 10 V
general purpose
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
I
D
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
CONDITIONS
-
R
GS
= 20 k
-
T
= 25 C
On PCB in Fig.2
T
= 25 C
On PCB in Fig.2
T
amb
= 100 C
T
sp
= 25 C
T
= 25 C
On PCB in Fig.2
T
amb
= 25 C
-
MIN.
-
-
-
-
-
MAX.
55
55
20
7.5
3.5
UNIT
V
V
V
A
A
I
D
Drain current (DC)
-
2.2
A
I
DM
P
tot
P
tot
Drain current (pulse peak value)
Total power dissipation
Total power dissipation
-
-
-
40
8.3
1.8
A
W
W
T
stg
, T
j
Storage & operating temperature
- 55
150
C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
d
g
s
4
1
2
3
December 1997
1
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHT8N06TT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 3.5A I(D) | SOT-223 |
| PHTU-2D7-A | 制造商:Telex 功能描述:PHTU-2D7 RE-2PRO Handheld Transmitter with N/D767a Supercardioid Dynamic Microph |
| PHT-V35-XTR/M | 制造商:Pan Pacific 功能描述: |
| PHU101NQ03LT | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHU101NQ03LT,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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