參數(shù)資料
型號(hào): PHP96NQ03LT
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: Turret Lug, for 2.4mm panel thickness
中文描述: 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù): 11/14頁(yè)
文件大小: 293K
代理商: PHP96NQ03LT
Philips Semiconductors
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
Product data
Rev. 03 — 23 October 2001
11 of 14
9397 750 08963
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Fig 16. SOT428 (D-PAK).
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT428
TO-252
SC-63
98-04-07
99-09-13
0
10
20 mm
scale
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
E
b2
D1
w
A
M
b
c
b1
L1
L
1
3
2
D
E1
HE
L2
Note
1. Measured from heatsink back to lead.
e1
e
A
A2
A
A1
y
seating plane
mounting
base
A1
(1)
D
max.
b
D1
max.
E
max.
HE
max.
w
y
max.
A2
b2
b1
max.
c
E1
min.
e
e1
L1
min.
L2
L
A
max.
UNIT
DIMENSIONS (mm are the original dimensions)
0.2
0.2
mm
2.38
2.22
0.65
0.45
0.89
0.71
0.89
0.71
1.1
0.9
5.36
5.26
0.4
0.2
6.22
5.98
4.81
4.45
2.285
4.57
10.4
9.6
0.5
0.7
0.5
6.73
6.47
4.0
2.95
2.55
相關(guān)PDF資料
PDF描述
PHB96NQ03LT N-channel enhancement mode field-effect transistor
PHD96NQ03LT N-channel enhancement mode field-effect transistor
PHP9N60E PowerMOS transistors Avalanche energy rated
PHT-1901 LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS
PHT-1902 LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP96NQ03LT,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP98N03LT 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
PHP9N60E 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated
PHP9NQ20T 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP9NQ20T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube