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參數(shù)資料
| 型號(hào)： | PHP8N20E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 59K |
| 代理商： | PHP8N20E |
Philips Semiconductors
Product specification
PowerMOS transistor
PHP8N20E
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/
Drain-source breakdown
T
j
voltage temperature coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
200
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.25
-
V/K
V
GS
= 10 V; I
= 6.4 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 50 V; I
= 5.4 A
V
DS
= 200 V; V
GS
= 0 V
V
DS
= 160 V; V
GS
= 0 V; T
j
= 125 C
V
GS
=
±
30 V; V
DS
= 0 V
I
D
= 5.9 A; V
DD
= 160 V; V
GS
= 10 V
-
0.35
3.0
4.7
1
30
10
30
4.5
15
12
45
80
40
3.5
0.4
4.0
-
25
250
100
40
6
20
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
2.0
3.8
-
-
-
-
-
-
-
-
-
-
-
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
Gate-source leakage current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
V
DD
= 100 V; I
D
= 5.9 A;
R
G
= 12
; R
D
= 16
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
700
100
50
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
CONDITIONS
T
mb
= 25C
MIN.
-
TYP.
-
MAX.
9.2
UNIT
A
T
mb
= 25C
-
-
37
A
I
S
= 9 A; V
GS
= 0 V
I
= 5.9 A; V
GS
= 0 V;
dI/dt = 100 A/
μ
s
-
-
-
1.5
-
V
ns
180
Q
rr
Reverse recovery charge
-
1.2
-
μ
C
February 1997
2
Rev 1.000
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