參數(shù)資料
型號： PHP78NQ03LT
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOSTM logic level FET
中文描述： 75 A, 25 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 2/12頁
文件大?。?/td> 85K
代理商： PHP78NQ03LT
9397 750 15086
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 05 — 9 June 2005
2 of 12
Philips Semiconductors
PHP78NQ03LT
N-channel TrenchMOS logic level FET
3.
Ordering information
4.
Limiting values
Table 2:
Type number
Ordering information
Package
Name
SC-46
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Version
SOT78
PHP78NQ03LT
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage
V
DGR
drain-gate voltage
V
GS
gate-source voltage
I
D
drain current
Limiting values
Conditions
25
°
C
≤
T
j
≤
175
°
C
25
°
C
≤
T
j
≤
175
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
-
-
55
55
Max
25
25
±
20
61
43
75
53
228
93
+175
+175
Unit
V
V
V
A
A
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 5 V;
Figure 2
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 100
°
C; V
GS
= 10 V
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
75
228
A
A
unclamped inductive load; I
D
= 43 A;
t
p
= 0.25 ms; V
DD
≤
25 V; R
GS
= 50
;
V
GS
= 10 V; starting at T
j
= 25
°
C
-
185
mJ
相關(guān)PDF資料
PDF描述
PHU78NQ03LT N-channel TrenchMOSTM logic level FET
PHP82NQ03LT TrenchMOS⑩ logic level FET
PHB82NQ03LT TrenchMOS⑩ logic level FET
PHD82NQ03LT TrenchMOS⑩ logic level FET
PHP8N20E PowerMOS transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP78NQ03LT,127 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP79NQ08LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET
PHP79NQ08LT,127 功能描述:MOSFET Trans MOSFET N-CH 75V 73A 3-Pin(3+Tab) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP79NQ08LT127 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
PHP7N40E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*