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參數(shù)資料
| 型號： | PHP66NQ03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Turret Lug, for 1.6mm panel thickness |
| 中文描述： | 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 301K |
| 代理商： | PHP66NQ03LT |
Philips Semiconductors
PHP/PHB/PHD66NQ03LT
N-channel TrenchMOS transistor
Product data
Rev. 02 — 10 December 2001
6 of 14
9397 750 09119
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ag20
0
15
30
45
60
75
I
D
(A)
0
0.4
0.8
1.2
1.6
2
V
DS
(V)
5 V
T
j
= 25 oC
V
GS
= 3 V
10 V
3.5 V
6 V
4 V
4.5 V
03ag22
0
15
30
45
60
75
I
D
(A)
0
1
2
3
4
5
V
GS
(V)
V
DS
> I
D
x R
DSon
T
j
= 25 oC
175 oC
03ag21
0
0.004
0.008
0.012
0.016
0.02
0
15
30
45
60
75
I
D
(A)
R
DSon
(
)
V
GS
= 4.5 V
T
j
= 25 oC
5V
10 V
6 V
03af18
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
T
j
(oC)
a
a
R
DSon 25 C
)
----------------------------
=
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHP66NQ03LT,127 | 功能描述:MOSFET PHP66NQ03LT/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP69N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
| PHP69N03T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHP69NLT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TrenchMOS transistor Logic level FET |
| PHP6N10E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
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