參數(shù)資料
型號: PHP50N06
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 52 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 5/7頁
文件大?。?/td> 54K
代理商: PHP50N06
Philips Semiconductors
Product specification
PowerMOS transistor
PHP50N06
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 52 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
0
20
40
QG / nC
VGS / V
12
10
8
6
4
2
0
VDS / V =10
40
BUK456-50
0
1
2
BUK456-50A
VSDS / V
IF / A
100
50
0
25 C
150 C
August 1996
5
Rev 1.000
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參數(shù)描述
PHP50N06LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET
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PHP52N06T,127 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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