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參數(shù)資料
| 型號： | PHP44N06LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 80K |
| 代理商： | PHP44N06LT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP44N06LT, PHB44N06LT, PHD44N06LT
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
TYP.
-
MAX.
1.31
UNIT
K/W
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint
60
50
-
-
K/W
K/W
ESD LIMITING VALUE
SYMBOL PARAMETER
V
C
Electrostatic discharge
capacitor voltage, all pins
CONDITIONS
Human body model (100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)GSS
Gate-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
50
10
TYP. MAX. UNIT
-
-
-
-
-
-
V
V
V
T
j
= -55C
I
G
=
±
1 mA;
V
DS
= V
GS
; I
D
= 1 mA
1.0
0.5
-
-
-
-
13
-
-
-
-
-
-
-
1.5
-
-
22
20
-
40
0.02
-
0.05
-
27.5
7
13
2.0
-
2.3
28
26
59
-
1
20
10
500
-
-
-
V
V
V
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 5 V; I
D
= 20 A
V
GS
= 10 V; I
D
= 20 A
m
m
m
S
μ
A
μ
A
μ
A
μ
A
nC
nC
nC
T
j
= 175C
g
fs
I
GSS
Forward transconductance
Gate source leakage current V
GS
=
±
5 V; V
DS
= 0 V
V
DS
= 25 V; I
D
= 25 A
T
j
= 175C
I
DSS
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
V
DS
= 55 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
I
D
= 40 A; V
DD
= 44 V; V
GS
= 5 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
V
DD
= 30 V; I
D
= 25 A;
V
= 5 V; R
= 10
Resistive load
-
-
-
-
-
-
22
85
70
64
3.5
4.5
32
125
95
85
-
-
ns
ns
ns
ns
nH
nH
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1300
250
130
1700
300
180
pF
pF
pF
September 1998
2
Rev 1.400
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| PHP44N06T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHP45N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
| PHP45N03LTA | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PHP45N03LTA,127 | 功能描述:MOSFET N-CH 25V 40A TO220AB RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:TrenchMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| PHP45N03T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
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