參數(shù)資料
型號(hào): PHP42N03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor Logic level FET
中文描述: 42 A, 30 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 63K
代理商: PHP42N03LT
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP42N03LT, PHB42N03LT
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
1.75
K/W
SOT78 package, in free air
SOT404 package, pcb mounted, minimum
footprint
-
-
60
50
-
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
30
27
1
0.5
-
-
-
-
8
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
1.5
2
-
-
-
2.3
16
23
20
26
-
48
27
-
0.05
10
-
500
10
100
40
-
7
-
10
-
12
20
80
130
35
60
31
45
3.5
-
4.5
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 10 V; I
= 25 A
V
GS
= 5 V; I
D
= 25 A
V
GS
= 5 V; I
D
= 25 A; T
j
= 175C
V
DS
= 25 V; I
D
= 25 A
V
DS
= 30 V; V
GS
= 0 V;
m
m
m
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
g
fs
I
DSS
Forward transconductance
Zero gate voltage drain
current
Gate source leakage current V
GS
=
±
5 V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
T
j
= 175C
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
I
D
= 20 A; V
DD
= 24 V; V
GS
= 10 V
V
DD
= 15 V; I
D
= 25 A;
V
= 5 V; R
= 5
Resistive load
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1050
270
140
-
-
-
pF
pF
pF
November 1998
2
Rev 1.400
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