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參數(shù)資料
| 型號(hào)： | PHP37N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管) |
| 中文描述： | 37 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | PHP37N06T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHP37N06T
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1.0E-06
0.0001
0.01
t/s
1
100
0.01
0.1
1
10ZTH/ (K/W)
0.5
0.2
0.1
0.05
0.02
0
D =
t
p
t
p
T
T
P
D
t
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
0
20
40
60
80
100
ID/A
VDS/V
VGS/V =
16
14
12
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.0
1
10
100
1
10
100
1000
tp =
1 us
10us
100 us
1 ms
10ms
100ms
ID/A
VDS/V
RDS(ON) = VDS/ID
DC
0
10
20
30
40
50
60
70
20
25
30
35
40
45
50
55
60VGS/V =
6
6.5
7
8
9
10
ID/A
December 1997
4
Rev 1.200
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