參數(shù)資料
型號: PHP2N60E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 7/10頁
文件大小: 94K
代理商: PHP2N60E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP2N60E, PHB2N60E, PHD2N60E
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
August 1998
7
Rev 1.100
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