參數(shù)資料
型號(hào): PHP152NQ03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS logic level FET
中文描述: 75 A, 25 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù): 2/13頁(yè)
文件大?。?/td> 102K
代理商: PHP152NQ03LT
Philips Semiconductors
PHP/PHB152NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 20 February 2002
2 of 13
9397 750 09353
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
T
j
= 25 to 175
°
C
T
mb
= 25
°
C; V
GS
= 5 V
T
mb
= 25
°
C
Typ
3
3.6
Max
25
75
230
175
4
5
Unit
V
A
W
°
C
m
m
T
j
= 25
°
C; V
GS
= 10 V; I
D
= 25 A
T
j
= 25
°
C; V
GS
= 5 V; I
D
= 25 A
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
T
j
= 25 to 175
°
C
T
j
= 25 to 175
°
C; R
GS
= 20 k
T
mb
= 25
°
C; V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 5 V;
Figure 2
Min
55
55
Max
25
25
75
75
±
20
240
230
+175
+175
Unit
V
V
A
A
V
A
W
°
C
°
C
V
GS
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
10
μ
s
gate-source voltage
peak drain current
total power dissipation
storage temperature
operating junction temperature
T
mb
= 25
°
C; pulsed; t
p
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
T
mb
= 25
°
C
75
240
A
A
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