參數(shù)資料
型號: PHP125
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: P-channel enhancement mode MOS transistor(P溝道增強型MOS晶體管)
中文描述: 2.5 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝: PLASTIC, SO-8
文件頁數(shù): 5/12頁
文件大?。?/td> 105K
代理商: PHP125
1997 Jun 18
5
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP125
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
30
1
TYP.
0.33
0.22
250
140
50
10
MAX.
2.8
100
±
100
0.4
0.25
25
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
V
GS
= 0; I
D
=
10
μ
A
V
GS
= V
DS
; I
D
=
1 mA
V
GS
= 0; V
DS
=
24 V
V
GS
=
±
20 V; V
DS
= 0
V
GS
=
4.5 V; I
D
=
0.5 A
V
GS
=
10 V; I
D
=
1 A
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
V
GS
=
10 V; V
DS
=
15 V;
I
D
=
1 A
V
GS
=
10 V; V
DS
=
15 V;
I
D
=
1 A
V
GS
=
10 V; V
DS
=
15 V;
I
D
=
1 A
V
V
nA
nA
pF
pF
pF
nC
C
iss
C
oss
C
rss
Q
G
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
Q
GS
gate-source charge
1
nC
Q
GD
gate-drain charge
3
nC
Switching times
(see Fig.11)
t
d(on)
t
f
t
on
t
d(off)
t
r
t
off
turn-on delay time
fall time
turn-on switching time
turn-off delay time
rise time
turn-off switching time
V
GS
= 0 to
10 V; V
DD
=
15 V;
I
D
=
1 A; R
L
= 15
; R
gen
= 6
4.5
3.5
8
25
15
40
16
80
ns
ns
ns
ns
ns
ns
V
GS
=
10 to 0 V; V
DD
=
15 V;
I
D
=
1 A; R
L
= 15
; R
gen
= 6
Source-drain diode
V
SD
t
rr
source-drain forward voltage
reverse recovery time
V
GD
= 0; I
S
=
1.25 A
I
S
=
1.25 A; di/dt = 100 A/
μ
s
150
1.6
200
V
ns
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