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參數(shù)資料
| 型號(hào)： | PHN1015 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor Logic level |
| 中文描述： | 10 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 95K |
| 代理商： | PHN1015 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHN1015
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
25
22
1
0.6
-
-
-
-
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
1.5
2
-
-
-
2.3
11
15
15
18
-
31
25
-
10
100
0.05
10
-
500
20
-
4.5
-
6.5
-
7
15
56
80
57
80
38
50
1
-
3
-
1230
-
354
-
254
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 150C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 10 V; I
= 10 A
V
GS
= 5 V; I
D
= 10 A
V
GS
= 5 V; I
D
= 10 A; T
j
= 150C
V
DS
= 25 V; I
D
= 10 A
m
m
m
S
nA
μ
A
μ
A
nC
nC
nC
ns
ns
ns
ns
nH
nH
pF
pF
pF
g
fs
I
GSS
I
DSS
Forward transconductance
Gate source leakage current V
GS
=
±
5 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
Input capacitance
Output capacitance
Feedback capacitance
V
DS
= 25 V; V
GS
= 0 V;
T
j
= 150C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
s
C
iss
C
oss
C
rss
I
D
= 10 A; V
DD
= 15 V; V
GS
= 5 V
V
DD
= 15 V; I
D
= 25 A;
V
= 10 V; R
G
= 5
Resistive load
Drain leads to centre of die
Source leads to source bond pad
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous source current
(body diode)
I
DRM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
a
= 25 C, t
p
≤
10 s
MIN.
-
TYP.
-
MAX.
10
UNIT
A
-
-
40
A
I
F
= 10 A; V
GS
= 0 V
I
F
= 10 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 25 V
-
-
-
0.8
87
0.1
1.2
-
-
V
ns
μ
C
December 1999
2
Rev 1.300
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHN1018 | 制造商:NXP Semiconductors 功能描述:MOSFET N SO-8 |
| PHN1018/T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MOSFET SOT-96 |
| PHN103 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode MOS transistor |
| PHN103S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 25V V(BR)DSS | 6A I(D) | SO |
| PHN103T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8.6A I(D) | SO |
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