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參數(shù)資料
| 型號： | PHD96NQ03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 293K |
| 代理商： | PHD96NQ03LT |
Philips Semiconductors
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
Product data
Rev. 03 — 23 October 2001
12 of 14
9397 750 08963
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
10. Revision history
Table 6:
Rev Date
03
Revision history
CPCN
20011023
Description
Includes product data; third version; supersedes second version PHP96NQ03LT of
08 October 2001.
Table 5 “Characteristics” “Dynamic characteristics” on page 5
: Improvements in gate
charge and capacitance.
Includes product data; second version; supersedes initial version PHP96NQ03LT of
2 June 2001.
Product data; initial version
-
02
20011008
-
01
20010716
-
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHD96NQ03LT /T3 | 功能描述:兩極晶體管 - BJT TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PHD96NQ03LT,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHD97NQ03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET |
| PHD97NQ03LT,118 | 功能描述:MOSFET Trans MOSFET N-CH 25V 75A 3-Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHD98N03LT | 制造商:NXP Semiconductors 功能描述:75 A, 25 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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