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| 型號(hào)： | PHB98N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 25 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁(yè)數(shù)： | 5/14頁(yè) |
| 文件大?。?/td> | 287K |
| 代理商： | PHB98N03LT |
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Philips Semiconductors
PHP/PHB/PHD98N03LT
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 18 October 2001
5 of 14
9397 750 08726
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 25 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
15 V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
25
22
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage
1
0.5
-
1.5
-
-
2
-
2.3
V
V
V
I
DSS
drain-source leakage current
-
-
-
0.05
-
10
1
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
-
-
6.2
10.5
7.3
12.4
m
m
-
5.2
5.9
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
turn-on rise time
t
d(off)
turn-off delay time
t
f
turn-off fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
Q
r
recovered charge
I
D
= 50 A; V
DD
= 15 V; V
GS
= 5 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
40
16
15
3000 -
710
510
18
80
104
104
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz;
Figure 11
-
-
-
-
-
-
V
DD
= 15 V; I
D
= 12.5 A; V
GS
= 5 V;
R
G
= 5.6
; resistive load
-
-
-
0.9
37
20
1.2
-
-
V
ns
nC
I
S
= 10 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V
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