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參數(shù)資料
| 型號： | PHB80N06LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | 75 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SOT-404, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 71K |
| 代理商： | PHB80N06LT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHB80N06LT
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
0.84
UNIT
K/W
R
th j-a
Minimum footprint, FR4
board
50
-
K/W
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
50
1.0
0.5
-
-
-
-
-
10
TYP.
-
-
1.5
-
-
0.05
-
0.02
-
-
MAX.
-
-
2.0
-
2.3
10
500
1
10
-
UNIT
V
V
V
V
V
μ
A
uA
μ
A
μ
A
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 55 V; V
GS
= 0 V;
T
j
= 175C
I
GSS
Gate source leakage current
V
GS
=
±
5 V; V
DS
= 0 V
T
j
= 175C
±
V
(BR)GSS
Gate-source breakdown
voltage
Drain-source on-state
resistance
I
G
=
±
1 mA;
R
DS(ON)
V
GS
= 5 V; I
D
= 25 A
-
-
12
-
14
30
m
m
T
j
= 175C
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
Q
g(tot)
Total gate charge
Q
gs
Gate-source charge
Q
gd
Gate-drain (Miller) charge
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 25 A
I
D
= 50 A; V
DD
= 44 V; V
GS
= 5 V
MIN.
30
-
-
-
-
-
-
-
-
-
-
TYP.
65
43
13
20
2900
500
240
35
95
130
60
MAX.
-
-
-
-
3800
600
330
50
145
180
80
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
V
DD
= 30 V; I
D
= 25 A;
V
GS
= 5 V; R
G
= 10
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
-
2.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
December 1997
2
Rev 1.100
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| PHB80N06LTT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-404 |
| PHB80N06T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHB80N06TT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-404 |
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