- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367938 > PHB4N40E (NXP SEMICONDUCTORS) PowerMOS transistors Avalanche energy rated PDF資料下載
參數(shù)資料
| 型號(hào)： | PHB4N40E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 4.4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-404, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 78K |
| 代理商： | PHB4N40E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP4N40E, PHB4N40E
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
PHP2N60
1ms
1s
Zth j-mb, Transient thermal impedance (K/W)
1us
10us
100us
tp, pulse width (s)
10ms
100ms
0.001
0.01
0.1
1
10
D =
tp
tp
T
T
P
D
t
D = 0.5
0.2
single pulse
0.02
0.05
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
0
2
4
6
8
10
PHP4N40
10 V
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
Tj = 25 C
5 V
6 V
6.5 V
7 V
5.5 V
VGS = 4.5 V
10
100
1000
10000
0.1
1
10
100
PHP4N40
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
100 us
1 ms
10 ms
RDSON =VDSID
DC
tp = 10 us
0
2
4
6
8
10
0
1
2
3
4
PHP4N40
VGS = 7 V
5 V
5.5 V
10 V
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
4.5 V
6 V
Tj = 25 C
6.5 V
December 1998
4
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHP4N40E | PowerMOS transistors Avalanche energy rated |
| PHB4N60E | PowerMOS transistors Avalanche energy rated |
| PHP4N60E | PowerMOS transistors Avalanche energy rated |
| PHB50N03LT | N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場(chǎng)效應(yīng)管) |
| PHB50N06 | TrenchMOS transistor Standard level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHB4N40T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.4A I(D) | SOT-404 |
| PHB4N4XF | 制造商:Eaton Corporation 功能描述:PISTOL HANDLE, BLACK, EXTENDED, Accessory Type:Pistol Handle, For Use With:R9 Se 制造商:Eaton Corporation 功能描述:PISTOL HANDLE, BLACK, EXTENDED, Accessory Type:Pistol Handle, For Use With:R9 Series Frame F & G Non Fusible Disconnect Switches , RoHS Compliant: Yes |
| PHB4N50T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5.9A I(D) | SOT-404 |
| PHB4N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHB4ND40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。