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參數(shù)資料
| 型號(hào)： | PHB37N06LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | 37 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SOT-404, 3 PIN |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | PHB37N06LT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP37N06LT, PHB37N06LT, PHD37N06LT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
37
A
-
-
148
A
I
F
= 25 A; V
GS
= 0 V
I
F
= 34 A; V
GS
= 0 V
I
F
= 34 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
-
-
-
-
0.95
1.0
40
0.16
1.2
-
-
-
V
V
ns
μ
C
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 20 A; V
≤
25 V; V
GS
= 5 V;
R
GS
= 50
; T
mb
= 25 C
MIN.
-
MAX.
45
UNIT
mJ
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
5 V
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
September 1998
3
Rev 1.400
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHD37N06LT | TrenchMOS transistor Logic level FET |
| PHP37N06T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管) |
| PHP3N40E | PowerMOS transistors Avalanche energy rated |
| PHB3N40E | PowerMOS transistors Avalanche energy rated |
| PHD3N40E | PowerMOS transistors Avalanche energy rated |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHB37N06LTT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 37A I(D) | SOT-404 |
| PHB37N06T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHB37N06TT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 37A I(D) | SOT-404 |
| PHB38N02LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS logic level FET |
| PHB38N02LT,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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