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參數(shù)資料
| 型號(hào)： | PHB24N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | 24 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SOT-404, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 54K |
| 代理商： | PHB24N03LT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP24N03LT, PHB24N03LT
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.8. Typical transconductance, T
j
= 25 C
g
fs
= f(I
D
)
1
10
100
1
10
100
PHP24N03T
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
RDSON =VDSID
100 us
1 ms
10 ms
DC
10 us
Tmb = 25 C
0
5
10
15
20
0
0.02
0.04
0.06
0.08
0.1
0.12
PHP24N03LT
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
VGS = 2.5 V
3 V
3.5 V
5 V
15 V
Tj = 25 C
1us
10us 100us
1ms
10ms
0.1s
1s
10s
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
PHP24N03T
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
D =
0
1
2
3
4
5
0
5
10
15
20
PHP24N03LT
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS = 25 V
Tj = 25 C
175 C
0
5
10
15
20
25
30
0
5
10
15
20
VGS = 2.5 V
3 V
3.5 V
PHP24N03LT
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
5 V
15 V
Tj = 25 C
0
5
10
15
20
0
5
10
15
PHP24N03LT
Drain current, ID (A)
Transconductance, gfs (S)
VDS = 25 V
Tj = 25 C
175 C
January 1998
4
Rev 1.300
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