- 您現(xiàn)在的位置：買賣IC網 > PDF目錄369998 > PH5330 (NXP SEMICONDUCTORS) N-channel enhancement mode field-effect transistor PDF資料下載
參數(shù)資料
| 型號： | PH5330 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 50 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, LFPAK-5 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 239K |
| 代理商： | PH5330 |
Philips Semiconductors
PH5330
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 18 July 2003
6 of 12
9397 750 10951
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ag89
0
20
40
60
80
0
1
2
3
4
5
V
DS
(V)
I
D
(A)
3.5 V
V
GS
= 3 V
10 V
4 V
4.5 V
03ag90
0
20
40
60
80
0
1
2
3
4
V
GS
(V)
I
D
(A)
V
DS
> I
D
x R
DSon
T
j
= 25 oC
150 oC
03ag95
0
0.01
0.02
0.03
0
20
40
60
I
D
(A)
R
DSon
(
)
3 V
V
GS
= 3.5 V
4.5 V
10 V
4 V
03ah32
0
0.6
1.2
1.8
-80
-20
40
100
160
Tj (
°
C)
a
a
R
DSon 25 C
°
)
---------------------------
=
相關PDF資料 |
PDF描述 |
|---|---|
| PH5416 | PNP high-voltage transistor |
| PH8230 | N-channel enhancement mode field-effect transistor |
| PH955L | Circular Connector; No. of Contacts:16; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle |
| PH965C6 | SPECIFICATION |
| PH967C6 | SPECIFICATION |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PH5330E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET |
| PH5330E,115 | 功能描述:MOSFET N-CH TRENCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PH5330E115 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 80A LFPAK |
| PH5-3440-07-GP13-CC | 制造商:STAFFALL 功能描述: |
| PH5-3440-5A-GP13-CC | 制造商:STAFFALL 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。