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參數(shù)資料
| 型號(hào)： | PH2222 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN switching transistor |
| 中文描述： | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 45K |
| 代理商： | PH2222 |
1999 Apr 27
3
Philips Semiconductors
Product specification
NPN switching transistor
PH2222A
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
35
50
75
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
amb
= 150
°
C
I
C
= 0; V
EB
= 3 V
I
C
= 0.1 mA; V
CE
= 10 V
I
C
= 1 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V; T
amb
=
55
°
C 35
I
C
= 150 mA; V
CE
= 1 V; note 1
I
C
= 150 mA; V
CE
= 10 V; note 1
I
C
= 500 mA; V
CE
= 10 V; note 1
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
10
10
10
300
300
1
1.2
2
8
25
4
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
50
100
40
0.6
300
V
CEsat
collector-emitter saturation voltage
mV
V
V
V
pF
pF
MHz
db
V
BEsat
base-emitter saturation voltage
C
c
C
e
f
T
F
collector capacitance
emitter capacitance
transition frequency
noise figure
Switching times (between 10% and 90% levels);
see Fig.2
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
15 mA
35
15
20
250
200
60
ns
ns
ns
ns
ns
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PH2222/A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Switching Transistors |
| PH2222A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN switching transistor |
| PH2222A,126 | 制造商:NXP Semiconductors 功能描述: |
| PH2222AT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-92 |
| PH2226-110M | 功能描述:射頻雙極電源晶體管 RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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