參數(shù)資料
型號(hào): PH1214-300M
英文描述: Radar Pulsed Power Transistor, 300 Watts,1.20-1.40 GHz, 150 mS Pulse, 10% Duty
中文描述: 雷達(dá)脈沖功率晶體管,300瓦,1.20 - 1 .40千兆赫,150毫秒脈沖,10%的稅
文件頁數(shù): 2/4頁
文件大?。?/td> 248K
代理商: PH1214-300M
Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150
μ
S Pulse, 10% Duty
PH1214-300M
12/06/01
Rev. 0
Sample Test Data
(Broadband test fixture matched to 50
.)
2
Freq.
(GHz)
Pin
(W)
Pout
(W)
Gain
(dB)
Gain
(dB)
Eff.
(%)
Ic (A)
Droop
(dB)
P1dB Overdrive
VSWR-S
Pout
(W)
Po
(dB)
Gain
(dB)
Droop
(dB)
Eff.
(%)
1.5:1
2:1
2.5:1
1.2
40
406
10.06
0.82
63.2
16.1
0.1
18
451
0.46
9.52
0.38
59.8
S
S
S
1.3
40
355
9.48
59.3
15
0.04
15
412
0.65
9.12
0.32
58.2
S
S
S
1.4
40
335.8
9.24
58.4
14.4
0.06
16
378
0.51
8.75
0.35
56
S
S
S
RL
(dB)
Note:
Po(dB)
is the difference between Pout at 1dB overdrive and Pout at Pin = 40W.
PH1214-300M Pout vs. Pin
0
100
200
300
400
500
0
10
20
30
40
50
60
Pin (W)
P
1.2 GHz
1.3 GHz
1.4 GHz
Power Output Curves
相關(guān)PDF資料
PDF描述
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