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參數(shù)資料
| 型號： | PH1113-100 |
| 英文描述： | Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30% Duty |
| 中文描述： | 雷達(dá)脈沖功率晶體管- 100瓦，1月1日至1月三日千兆赫，為3ms脈沖，30％的關(guān)稅 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 62K |
| 代理商： | PH1113-100 |
Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3
μ
s Pulse, 30% Duty
PH1113-100
M/A-COM Division of AMP Incorporated North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Outline Drawing
1
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Electrical Specifications at 25°C
Symbol
BV
CES
Collector-Emitter Breakdown Voltage
I
CES
Collector-Emitter Leakage Current
R
TH(JC)
Thermal Resistance
P
IN
Input Power
G
P
Power Gain
η
Collector Efficiency
RL
Input Return Loss
VSWR-T
Load Mismatch Tolerance
Radar Pulsed Power Transistor - 100 Watts,
1.1-1.3 GHz, 3
μ
s Pulse, 30% Duty
Absolute Maximum Rating at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +25°C
Storage Temperature
Junction Temperature
Symbol
V
CES
V
EBO
I
C
P
TOT
Rating
70
3.0
9.0
350
Units
V
V
A
W
T
stg
T
j
-65 to +200
200
°C
°C
Broadband Test Fixture Impedance
F (GHz)
1.1
1.2
1.3
Z
IF
(
)
5.8 - j3.4
5.6 - j1.8
5.9 - j0.4
Z
OF
(
)
3.0 - j1.7
3.0 - j1.5
2.8 - j1.3
Parameter
Test Conditions
Min
70
-
-
-
8.0
52
9
-
Max
-
10.0
0.5
16
-
-
-
3:1
Units
V
mA
°C/W
W
dB
%
dB
-
I
C
= 5 mA
V
CE
= 32 V
V
CC
= 32V, P
O
= 100 W, f = 1100, 1200, 1300 MHz
V
CC
= 32V, P
O
= 100 W, f = 1100, 1200, 1300 MHz
V
CC
= 32V, P
O
= 100 W, f = 1100, 1200, 1300 MHz
V
CC
= 32V, P
O
= 100 W, f = 1100, 1200, 1300 MHz
V
CC
= 32V, P
O
= 100 W, f = 1100, 1200, 1300 MHz
V
CC
= 32V, P
O
= 100 W, f = 1100, 1200, 1300 MHz
TEST FIXTURE
INPUT
CIRCUIT
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50
50
Description
M/A-COM’s PH1113-100 is a silicon bipolar NPN power tran-
sistor intended for use in L-band 1.1 - 1.3 GHz pulsed radars.
Designed for common-base, class C, broadband pulsed power
applications, the PH1113-100 can produce 25 watts of output
power with short pulse length (3μS) at 30 percent duty cycle.
The transistor is housed in a 2-lead rectangular metal-ceramic
flange package, with internal input and output impedance match-
ing networks. Diffused emitter ballast resistors and gold metal-
ization assure ruggedness and long-term reliability.
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