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參數(shù)資料
| 型號(hào)： | PGH308 |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 晶閘管 |
| 英文描述： | THYRISTOR MODULE |
| 中文描述： | 47.1 A, 800 V, SCR |
| 封裝： | MODULE-8 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 218K |
| 代理商： | PGH308 |
Electrical
Thermal Characteristics
Characteristics
Symbol
I
RM
V
FM
Rth(j-c) J unction to Case (Total)
Test Conditions
V
RM
= V
RRM,
Tj= 125
°
C
I
FM
= 30A, Tj=25
°
C
Maximum Value.
Unit
mA
V
°
C/W
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
*1 Value Per 1 Arm
Part of Thyristor (1 die)
5
1.06
0.70
Maximum Ratings
Grade
PGH308
800
900
800
900
Parameter
Symbol
Unit
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Parameter
V
DRM
V
DSM
V
RRM
V
RSM
V
V
Conditions
Max Rated
Value
Unit
Surge On-State Current
I
TSM
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
2msec to 10msec
V
D
=2/3V
DRM
, I
TM
=2
I
O
, Tj=125
°
C
I
G
=200mA, di
G
/dt=0.2A/
μ
s
V
RGM
400
A
I Squared t
I
2
t
800
A
2
s
Critical Rate of Turned-On Current
di/dt
100
A/
μ
s
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
P
GM
P
G(AV)
I
GM
V
GM
5
1
2
10
5
W
W
A
V
V
Electrical
Thermal Characteristics
Maximum Value.
Min. Typ. Max.
0.25
500
Characteristics
Symbol
Test Conditions
Unit
Peak Off-State Current
Peak Reverse Current
Peak On-State Voltage
I
DM
I
RM
V
TM
V
DM
= V
DRM,
Tj= 125
°
C
V
RM
= V
RRM,
Tj= 125
°
C
I
TM
= 90A, Tj=25
°
C
10
10
1.32
200
100
50
4
2.5
2
mA
mA
V
Tj=-40
°
C
Tj=25
°
C
Tj=125
°
C
Tj=-40
°
C
Tj=25
°
C
Tj=125
°
C
Gate Current to Trigger
I
GT
V
D
=6V,I
T
=1A
mA
Gate Voltage to Trigger
V
GT
V
D
=6V,I
T
=1A
V
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State Voltage
V
GD
dv/dt V
D
=2/3V
DRM
Tj=125
°
C
I
TM
=I
O
,V
D
=2/3V
DRM
dv/dt=20V/
μ
s, V
R
=100V
-di/dt=20A/
μ
s, Tj=125
°
C
tgt
td
tr
I
L
Tj=25
°
C
I
H
Tj=25
°
C
Rth(j-c) J unction to Case
V
D
=2/3V
DRM
Tj=125
°
C
V
V/
μ
s
Turn-Off Time
tq
150
μ
s
Turn-On Time
Delay Time
Rise Time
Latching Current
Holding Current
Thermal Resistance
6
2
4
90
40
μ
s
μ
s
μ
s
mA
V
D
=2/3V
DRM
Tj=125
°
C
I
G
=200mA, di
G
/dt=0.2A/
μ
s
1.45
°
C/W
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