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參數(shù)資料
| 型號： | PF5103 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Switch |
| 中文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 133K |
| 代理商： | PF5103 |
2006 Fairchild Semiconductor Corporation
PF5103 Rev. A
1
www.fairchildsemi.com
P
tm
October 2006
PF5103
N-Channel Switch
Features
This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
Sourced from process 51.
Absolute Maximum Ratings *
T
a
= 25°C unless otherwise noted
Symbol
Parameter
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150
°
C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
*
Symbol
* Minimum land pad.
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)GSS
I
GSS
On Characteristics
I
DSS
Small Signal Characteristics
g
fs
Forward Transfer conductance
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Value
Units
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
40
V
Gate-Source Voltage
-40
V
Forward Gate Current
50
mA
Operating and Storage Junction Temperature Range
-55 ~ 150
°
C
Parameter
Value
Units
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
mW
mW/
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
125
°
C/W
Thermal Resistance, Junction to Ambient
357
°
C/W
Test Condition
MIN
MAX
Units
Gate-Source Breakdwon Voltage
I
G
= -1.0
μ
A, V
DS
= 0
V
GS
= -15V, V
DS
= 0
V
GS
= -15V, V
DS
= 0, T
a
= 125
o
C
V
DS
= 15V, I
D
= 1.0nA
V
DS
= 0V, I
G
= 10mA
-40
V
Gate Reverse Current
-200
-500
pA
nA
V
GS(off)
V
GS(f)
Gate-Source Cutoff Voltage
-1.2
-2.7
V
Gate-Source Forward Voltage
1.0
V
Zero-Gate Voltage Drain Current *
V
DS
= 15V, V
GS
= 0
10
40
mA
V
DG
= 15V, I
D
= 500uA, f = 1.0KHz
V
DG
= 15V, I
D
= 2.0mA, f = 1.0KHz
V
DG
= 15V, I
D
= 500uA, f = 1.0KHz
V
DG
= 15V, V
GS
= 0V, f = 1.0MHz
V
DG
= 15V, V
GS
= 0V, f = 1.0MHz
3500
7500
μ
mhos
μ
mhos
g
oss
Ciss
Output Conductance
25
μ
mhos
Input Capacitance
16
pF
Crss
Reverse Transfer Capacitance
6
pF
1. Drain 2. Source 3. Gate
1 2 3
TO-92
Marking : PF5103
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