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參數(shù)資料
| 型號： | PF08103A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
| 中文描述： | 場效應(yīng)晶體管功率放大器模塊，電子GSM900和DCS1800和雙頻手持電話 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 42K |
| 代理商： | PF08103A |
PF08103A
4
Absolute Maximum Ratings
(Tc = 25
°
C)
Item
Symbol
Rating
Unit
Supply voltage
V
DD
I
DD GSM
I
DD DCS
V
CTL
, V
CTL
Vapc
8.5
V
Supply current
3
A
3
A
V
CTL
, V
CTL
voltage
Vapc voltage
4
V
4
V
Input power
Pin
10
dBm
Operating case temperature
Tc (op)
–30 to +100
°
C
°
C
Storage temperature
Tstg
–30 to +100
Output power
Pout
GSM
Pout
DCS
5
W
3
W
Note:
The maximum ratings shall be valid over both the E-GSM-band (880-915 MHz), and the DCS-band
(1710-1785 MHz).
Electrical Characteristics for DC
(Tc = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Drain cutoff current
Ids
—
—
20
μ
A
Vdd = 6.0 V, Vapc = 0 V,
V
CTL
= 0 V, V
CTL
= 0 V
Vdd = 8.5 V, Vapc = 0 V,
V
= 0 V, V
= 0 V,
Tc = –20 to +80
°
C
—
—
300
μ
A
V
CTL
control current
V
CTL
control current
I
CTL
I
CTL
—
100
160
μ
A
μ
A
V
CTL
= 3.0 V
V
CTL
= 3.0 V
—
50
80
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| PF08103B | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
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| PF08109B | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone |
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