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參數(shù)資料
| 型號： | PF0414 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | MOS FET Power Amplifier Module for DCS 1800 Handy Phone |
| 中文描述： | 場效應(yīng)晶體管功率放大器模塊手持電話的DCS系統(tǒng)1800 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 32K |
| 代理商： | PF0414 |
PF0414A
2
Electrical Characteristics (Tc = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
1710
—
1785
MHz
Control voltage range
V
APC
0.5
—
3
V
Drain cutoff current
I
DS
—
100
AV
DD = 11 V, VAPC = 0 V
Total efficiency
η
T
37
45
—
%
Pin = 2 mW, V
DD = 4.8 V,
2nd harmonic distortion
2nd H.D.
—
–45
–35
dBc
Pout = 1.8 W (at APC controlled),
3rd harmonic distortion
3rd H.D.
—
–45
–35
dBc
R
L = Rg = 50 , Tc = 25°C
Input VSWR
VSWR (in)
—
1.5
3
—
Output power (1)
Pout (1)
2.0
2.4
—
W
Pin = 2 mW, V
DD = 4.8 V,
V
APC = 3 V, RL = Rg = 50 ,
Tc = 25
°C
Output power (2)
Pout (2)
1.2
1.5
—
W
Pin = 2 mW, V
DD = 4.3 V,
V
APC = 3 V, RL = Rg = 50 ,
Tc = 80
°C
Isolation
—
–40
–30
dBm
Pin = 2 mW, V
DD = 4.8 V,
V
APC = 0.5 V, RL = Rg = 50 ,
Tc = 25
°C
Switching time
tr, tf
—
0.9
2
s
Pin = 2 mW, V
DD = 4.8 V,
Pout = 1.8 W, R
L = Rg = 50 ,
Tc = 25
°C
Stability
—
No parasitic oscillation
—
Pin = 2 mW, V
DD = 6 V,
Ids
≤ 0.9 A (only pulsed),
Pout
≤ 1.8 W (at APC controlled),
Rg = 50
, t = 20 sec., Tc = 25°C,
Output VSWR = 10 : 1 All phases
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PF0414A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:MOS FET Power Amplifier Module for DCS 1800 Handy Phone |
| PF0414B | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:MOS FET Power Amplifier Module for DCS 1800 Handy Phone |
| PF0415 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:MOS FET Power Amplifier Module for PCS 1900 Handy Phone |
| PF0415A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:MOS FET Power Amplifier Module for PCS 1900 Handy Phone |
| PF042935M14 | 制造商:Infineon Technologies AG 功能描述: |
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