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參數(shù)資料
| 型號： | PF01411 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM Handy Phone |
| 中文描述： | 場效應(yīng)晶體管功率放大器模塊，電子的GSM手持電話 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 25K |
| 代理商： | PF01411 |
PF01411A
2
Electrical Characteristics (Tc = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
880
—
915
MHz
Control voltage range
V
APC
0.5
—
3.0
V
Drain cutoff current
I
DS
—
100
A
V
DD = 10 V, VAPC = 0 V
Total efficiency
η
T
40
45
—
%
Pin = 1 mW, V
DD = 4.8 V,
2nd harmonic distortion
2nd H.D.
—
–45
–35
dBc
Pout = 3.8 W, Vapc = controlled
3rd harmonic distortion
3rd H.D.
—
–45
–35
dBc
R
L = Rg = 50 , Tc = 25°C
Input VSWR
VSWR (in)
—
1.5
3
—
Output power (1)
Pout (1)
3.8
4.3
—
W
Pin = 1 mW, V
DD = 4.8 V,
V
APC = 3.0 V, RL = Rg = 50 ,
Tc = 25
°C
Output power (2)
Pout (2)
2.5
2.9
—
W
Pin = 1 mW, V
DD = 4.3 V,
V
APC = 3.0 V, RL = Rg = 50 ,
Tc = 80
°C
Isolation
—
–50
–40
dBm
Pin = 1 mW, V
DD = 4.8 V,
V
APC = 0.5 V, RL = Rg = 50 ,
Tc = 25
°C
Switching time
tr, tf
—
1
2
s
Pin = 1 mW, V
DD = 4.8 V,
Pout = 3.8 W, R
L = Rg = 50 ,
Tc = 25
°C
Stability &
Load VSWR tolerance
—
No parasitic oscillation
&
No degradation
—
Pin = 1 mW, V
DD = 4 to 7 V,
Pout
≤ 3.8 W,
Vapc
≤ 3 V GSM pulse.
Rg = 50
, t = 20sec., Tc = 25°C,
Output VSWR = 6 : 1 All phases
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PF01411A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:MOS FET Power Amplifier Module for E-GSM Handy Phone |
| PF01411B | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:MOS FET Power Amplifier Module for E-GSM Handy Phone |
| PF01412 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:MOS FET Power Amplifier Module for E-GSM Handy Phone |
| PF01412A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:MOS FET Power Amplifier Module for E-GSM Handy Phone |
| PF01419B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Amplifier |
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