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參數資料
| 型號： | PF01410A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | MOS FET Power Amplifier Module for GSM Handy Phone |
| 中文描述： | 場效應晶體管功率放大器模塊的GSM手持電話 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 25K |
| 代理商： | PF01410A |
PF01410A
2
Electrical Characteristics
(Tc = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
890
—
915
MHz
—
Control voltage range
V
APC
I
DS
0.1
—
2.5
V
—
Drain cutoff current
—
—
100
μ
A
V
DD
= 10 V, V
APC
= 0 V
Total efficiency
η
T
38
45
—
%
Pin = +8 dBm, V
DD
= 4.8 V,
2nd harmonic distortion
2nd H.D.
—
–45
–35
dBc
Pout = 2.8 W (At APC controlled)
3rd harmonic distortion
3rd H.D.
—
–45
–35
dBc
R
L
= Rg = 50
, Tc = 25
°
C
Input VSWR
VSWR (in)
—
1.5
3.0
—
Output power (1)
Pout (1)
2.8
3.3
—
W
Pin = +8 dBm, V
DD
= 4.8 V,
V
APC
= 2.5 V, R
L
= Rg = 50
,
Tc = 25
°
C
Output power (2)
Pout (2)
1.5
1.8
—
W
Pin = +8 dBm, V
DD
= 4 V,
V
APC
= 2.5 V, R
L
= Rg = 50
,
Tc = 85
°
C
Isolation
—
—
–35
–20
dBm
Pin = +12.5 dBm, V
DD
= 4.8 V,
V
APC
= 0.1 V, R
L
= Rg = 50
,
Tc = 25
°
C
Switching time
t
r
, t
f
—
1
2
μ
s
Pin = +8 dBm, V
DD
= 4.8 V,
R
L
= Rg = 50
, Tc = 25
°
C
Time from Pout = –10 to +34.5 dBm
Stability
—
No parasitic
oscillation
—
Pin = +8 dBm, V
DD
= 7 V,
Pout
≤
2.8 W (At APC controlled),
Rg = 50
, Tc = 25
°
C,
Output VSWR = 8 : 1 All phases
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相關代理商/技術參數 |
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| PF01411 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:MOS FET Power Amplifier Module for E-GSM Handy Phone |
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| PF01412A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:MOS FET Power Amplifier Module for E-GSM Handy Phone |
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