參數(shù)資料
型號(hào): PESDXS2UQ
廠商: NXP Semiconductors N.V.
元件分類: 靜電保護(hù)器
英文描述: Double ESD protection diodes in SOT663 package
中文描述: sot663封裝的雙靜電保護(hù)二極管
文件頁數(shù): 6/13頁
文件大小: 121K
代理商: PESDXS2UQ
2004 Apr 27
6
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
PESDxS2UQ series
Notes
1.
2.
Non-repetitive current pulse 8/20
μ
s exponential decay waveform; see Fig.2.
Measured either across pins 1 and 3 or pins 2 and 3.
R
diff
differential resistance
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
I
R
= 5 mA
I
R
= 5 mA
I
R
= 5 mA
I
R
= 1 mA
I
R
= 0.5 mA
40
15
15
225
300
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
GRAPHICAL DATA
t
p
(
μ
s)
1
10
3
10
2
10
001aaa726
10
3
10
2
10
4
P
pp
(W)
10
Fig.4
Peak pulse power dissipation as a function
of pulse time; typical values.
T
amb
= 25
°
C.
t
p
= 8/20
μ
s exponential decaying waveform; see Fig.2.
T
j
(
°
C)
0
200
150
50
100
001aaa193
0.4
0.8
1.2
P
pp
0
P
pp(25C)
Fig.5
Relative variation of peak pulse power as a
function of junction temperature; typical
values.
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