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9397 750 14034
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 1 November 2005
5 of 14
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
6.
Characteristics
Table 8:
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
V
RWM
reverse standoff voltage
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
I
RM
reverse leakage current
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
V
BR
breakdown voltage
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
C
d
diode capacitance
Characteristics
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
3.3
5.0
12
15
24
V
V
V
V
V
V
RWM
= 3.3 V
V
RWM
= 5.0 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
R
= 5 mA
-
-
-
-
-
0.09
0.01
< 1
< 1
< 1
2
1
50
50
50
μ
A
μ
A
nA
nA
nA
5.8
7.0
14.2
17.1
25.4
6.4
7.6
15.8
18.8
27.8
6.9
8.2
16.7
20.3
30.3
V
V
V
V
V
V
R
= 0 V;
f = 1 MHz
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
clamping voltage
PESD3V3L2BT
-
-
-
-
-
101
75
19
16
11
-
-
-
-
-
pF
pF
pF
pF
pF
V
CL
[1] [2]
I
PP
= 1 A
I
PP
= 15 A
I
PP
= 1 A
I
PP
= 13 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 3 A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
26
10
28
20
37
25
44
40
70
V
V
V
V
V
V
V
V
V
V
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
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