參數(shù)資料
型號: PDTC143XEF
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN resistor-equipped transistors; R1 = 4.7 kohm, R2 = 10 kohm
中文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SC-89, 3 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 86K
代理商: PDTC143XEF
PDTC143X_SER_9
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 09 — 26 July 2005
5 of 12
Philips Semiconductors
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 k
, R2 = 10 k
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
[3]
Device mounted on an FR4 PCB with 60
μ
m copper strip line, standard footprint.
7.
Characteristics
Table 7:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
Conditions
in free air
Min
Typ
Max
Unit
[1]
-
-
-
-
-
-
-
-
833
500
500
500
250
500
625
K/W
K/W
K/W
K/W
K/W
K/W
K/W
[1] [2]
-
[1]
-
[2] [3]
-
[1]
-
[1]
-
[1]
-
Table 8:
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
I
CBO
collector-base cut-off
current
I
CEO
collector-emitter
cut-off current
Characteristics
Conditions
V
CB
= 50 V; I
E
= 0 A
Min
-
Typ
-
Max
100
Unit
nA
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
°
C
V
EB
= 5 V; I
C
= 0 A
-
-
-
-
1
50
μ
A
μ
A
I
EBO
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
-
-
600
μ
A
h
FE
V
CEsat
V
CE
= 5 V; I
C
= 10 mA
I
C
= 10 mA; I
B
= 0.5 mA
50
-
-
-
-
100
mV
V
I(off)
V
I(on)
R1
R2/R1
C
c
V
CE
= 5 V; I
C
= 100
μ
A
V
CE
= 300 mV; I
C
= 20 mA
-
2.5
3.3
1.7
-
-
-
4.7
2.1
-
0.3
-
6.1
2.6
2.5
V
V
k
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
pF
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