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參數(shù)資料
| 型號： | PDTC143ES |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN resistor-equipped transistor |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 49K |
| 代理商： | PDTC143ES |
1999 May 21
3
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PDTC143ZK
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
50
50
10
V
V
V
65
65
+30
5
100
100
250
+150
150
+150
V
V
mA
mA
mW
°
C
°
C
°
C
I
O
I
CM
P
tot
T
stg
T
j
T
amb
T
amb
≤
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
100
1.3
3.3
TYP.
0.6
0.9
4.7
MAX.
UNIT
I
CBO
I
CEO
collector cut-off current
collector cut-off current
I
E
= 0; V
CB
= 50 V
I
B
= 0; V
CE
= 30 V
I
B
= 0; V
CE
= 30 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 10 mA; V
CE
= 5 V
I
C
= 5 mA; I
B
= 0.25 mA
I
C
= 100
μ
A; V
CE
= 5 V
I
C
= 5 mA; V
CE
= 0.3 V
100
1
50
170
100
0.5
6.1
nA
μ
A
μ
A
μ
A
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
mV
V
V
k
resistor ratio
8
10
12
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V;
f = 1 MHz
2.5
pF
R1
R2
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|---|---|
| PDTC143ES AMO | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET AMMO RADIAL RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC143ES,126 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET AMMO RADIAL RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC143ET | 制造商:NXP Semiconductors 功能描述:NPN 50V 100mA Bulk 制造商:NXP Semiconductors 功能描述:TRANSISTOR DIGITAL SOT-23 |
| PDTC143ET /T3 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-11 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC143ET T/R | 制造商:NXP Semiconductors 功能描述:Trans Digital BJT NPN 50V 100mA 3-Pin TO-236AB T/R |
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