參數(shù)資料
型號: PDTC115E
廠商: NXP Semiconductors N.V.
英文描述: NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm
中文描述: NPN配電阻型晶體管;R1=10千,R2=10kW
文件頁數(shù): 2/14頁
文件大?。?/td> 93K
代理商: PDTC115E
2004 Aug 06
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 100 k
, R2 = 100 k
PDTC115E series
FEATURES
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
V
CEO
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
50
V
I
O
R1
R2
100
100
20
mA
k
k
PRODUCT OVERVIEW
Note
1.
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
PACKAGE
MARKING CODE
PNP COMPLEMENT
PHILIPS
EIAJ
PDTC115EE
PDTC115EEF
PDTC115EK
PDTC115EM
PDTC115ES
PDTC115ET
PDTC115EU
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
SC-75
SC-89
SC-59
SC-101
SC-43
SC-70
46
49
56
DV
PDTA115EE
PDTA115EEF
PDTA115EK
PDTA115EM
PDTA115ES
PDTA115ET
PDTA115EU
TC115E
*44
(1)
*15
(1)
相關(guān)PDF資料
PDF描述
PDTC115ES NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm
PDTC124XEF NPN resistor-equipped transistor
PDTC144WK NPN resistor-equipped transistors; R1 = 47 KOHM, R2 = 22 KOHM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PDTC115EE 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
PDTC115EE T/R 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
PDTC115EE,115 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
PDTC115EE115 制造商:NXP Semiconductors 功能描述:TRANS NPN W/RES 50V SOT-416
PDTC115EEF 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW