參數(shù)資料
型號: PDTC114ES
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN resistor-equipped transistor
中文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43A, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 67K
代理商: PDTC114ES
1998 Nov 26
3
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PDTC114ES
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
50
50
10
V
V
V
65
65
+40
10
100
100
500
+150
150
+150
V
V
mA
mA
mW
°
C
°
C
°
C
I
O
I
CM
P
tot
T
stg
T
j
T
amb
T
amb
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
30
2.5
7
TYP.
1.1
1.8
10
MAX.
UNIT
I
CBO
I
CEO
collector cut-off current
collector cut-off current
I
E
= 0; V
CB
= 50 V
I
B
= 0; V
CE
= 30 V
I
B
= 0; V
CE
= 30 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 5 mA; V
CE
= 5 V
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100
μ
A; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 0.3 V
100
1
50
400
150
0.8
13
nA
μ
A
μ
A
μ
A
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
mV
V
V
k
resistor ratio
0.8
1
1.2
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
2.5
pF
R1
R2
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