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參數(shù)資料
| 型號： | PDTA114XT |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | PNP resistor-equipped transistor |
| 中文描述： | PNP配電阻型晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | PDTA114XT |
1999 Apr 20
2
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA143XT
FEATURES
Built-in bias resistors R1 and R2
(typ.4.7 k
and 10 k
respectively)
Simplification of circuit design
Reduces number of components
and board space.
APPLICATIONS
Especially suitable for space
reduction in interface and driver
circuits
Inverter circuit configurations
without use of external resistors.
DESCRIPTION
PNP resistor-equipped transistor in a
SOT23 plastic package.
PINNING
PIN
DESCRIPTION
1
2
3
base/input
emitter/ground (+)
collector/output
Fig.1 Simplified outline (SOT23) and symbol.
handbook, 4 columns
2
1
3
MAM100
Top view
R1
R2
3
2
1
Fig.2
Equivalent inverter
symbol.
MGA893 - 1
1
3
2
MARKING
Note
1.
= p: Made in Hong Kong.
= t: Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
(1)
31
PDTA143XT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Refer to SOT23 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
50
10
UNIT
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
V
V
V
65
65
7
20
100
100
250
+150
150
+150
V
V
mA
mA
mW
°
C
°
C
°
C
I
O
I
CM
P
tot
T
stg
T
j
T
amb
T
amb
≤
25
°
C; note 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PDTA114ZK | PNP resistor-equipped transistor |
| PDTA114ZT | PNP resistor-equipped transistor |
| PDTA115EK | PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW |
| PDTA115EEF | PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW |
| PDTA115ES | PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PDTA114Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM |
| PDTA114YE | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM |
| PDTA114YE T/R | 功能描述:開關(guān)晶體管 - 偏壓電阻器 PNP W/RES 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTA114YE,115 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 PNP W/RES 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTA114YE115 | 制造商:NXP Semiconductors 功能描述:BRT TRANSISTOR PNP -50V -100MA 10KOH 制造商:NXP Semiconductors 功能描述:TRANS PNP W/RES 50V SOT-416 |
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