PDSP16318/16318A
6
Min.
100
20
20
8
2
10
8
2
2
8
5
-
-
-
-
-
Max.
-
-
-
-
-
-
-
-
-
-
30
30
30
30
110
60
Min.
50
15
15
5
2
10
5
2
2
8
5
-
-
-
-
-
ELECTRICAL CHARACTERISTICS
Test conditions (unless otherwise stated):
T
amb
(Commercial) = 0
°
C to +70
°
C, V
CC
= 5.0V
±
5%, GND = 0V
T
amb
(Industrial) =-40
°
C to +85
°
C, V
CC
= 5.0V
±
10%, GND = 0V
T
amb
(Military) =-55
°
C to +125
°
C, V
CC
= 5.0V
±
10%, GND = 0V
STATIC CHARACTERISTICS
Value
Characteristic
Symbol
Units
Max.
Conditions
Min.
Typ.
Output high voltage
Output low voltage
Input high voltage
Input low voltage
Input leakage current
Output leakage current
Output SC current
Input capacitance
V
OH
2.4
-
3.5
-
-10
-50
20
-
-
0.4
-
0.5
+10
+50
200
-
V
V
V
V
μ
A
μ
A
mA
pF
I
OH
= 3.2mA
l
OL
=-3.2mA
V
OL
V
IH
V
IL
I
IL
l
oz
I
OS
C
IN
GND < V
IN
<V
GND <V
OUT
< V
CC
V
cc
= Max
-
-
9
Max.
-
-
-
-
-
-
-
-
-
-
40
40
40
40
70
30
Characteristic
Clock period
Clock High Time
Clock Low Time
A15:0, B15:0 setup to clock rising edge
A15:0, B15:0 hold after clock rising edge
MS, S2:0, ASI setup to clock rising edge
DEL, ASR,
CLR
setup to clock rising edge
DEL, ASR,
CLR
, MS, S2:0, ASI hold after
clock rising edge
CEA
,
CEB
setup to clock falling edge
CEA
,
CEB
hold after clock rising edge
Clock rising edge to OVR, C15:0, D15:0
OEC
/
OED
low to C15:0/D15:0 high data valid
OEC
/
OED
low to C15:0/D15:0 low data valid
OEC
/
OED
high to C15:0/D15:0 high impedance
Vcc current
Vcc current
Conditions
2 x LSTTL + 20pF
2 x LSTTL + 20pF
2 x LSTTL + 20pF
2 x LSTTL + 20pF
V
CC
= max,
TTL input levels
Outputs unloaded,
f
CLK
= max
V
CC
= max,
CMOS input levels
Outputs unloaded,
f
CLK
= max
SWITCHING CHARACTERISTICS
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mA
mA
PDSP16318
PDSP16318A
Value
Industrial
Value
Military
NOTES
1.
2.
3.
LSTTL is equivalent to I
= 20 microamps, I
OL
= -0.4mA
Current is defined as negative into the device
CMOS input levels are defined as:
V
IL
= 0.5
V
IH
= V
DD
- 0.5