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參數(shù)資料
| 型號(hào)： | PDMB200E6 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | PDMB200E6 |
| 中文描述： | PDMB200E6 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 257K |
| 代理商： | PDMB200E6 |
QS043-402-20392（3/5）
00
日本インター株式會(huì)社
ＰＤＭＢ２００Ｅ６
0.1
0.2
0.5
1
2
5
10
20
50
100
200
100
300
1000
3000
10000
30000
100000
Collector to Emitter Voltage V
CE
(V)
C
Fig.6
- Capacitance vs. Collector to Emitter Voltage (Typical)
Cies
Coes
Cres
V
GE
=0V
f=1MH
Z
T
C
=25°C
0
1
2
3
4
5
0
50
100
150
200
250
300
350
400
Collector to Emitter Voltage V
CE
(V)
C
Fig.1
- Output Characteristics (Typical)
T
C
=25°C
11V
10V
V
GE
=20V
9V
8V
12V
15V
0
1
2
3
4
5
0
50
100
150
200
250
300
350
400
Collector to Emitter Voltage V
CE
(V)
C
Fig.2
- Output Characteristics (Typical)
T
C
=125°C
11V
10V
V
GE
=20V
9V
8V
12V
15V
0
4
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage V
GE
(V)
C
Fig.3
- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
T
C
=25°C
I
C
=100A
400A
200A
0
4
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage V
GE
(V)
C
Fig.4
- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
I
C
=100A
400A
T
C
=125°C
200A
0
200
400
600
800
0
50
100
150
200
250
300
350
400
Total Gate Charge Qg (nC)
C
G
G
Fig.5
- Gate Charge vs. Collector to Emitter Voltage (Typical)
0
2
4
6
8
10
12
14
16
V
CE
=300V
200V
100V
R
L
=1.5
(
T
C
=25°C
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