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參數(shù)資料
| 型號(hào)： | PDM41532LA15T |
| 元件分類： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 15 ns, PDSO44 |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 368K |
| 代理商： | PDM41532LA15T |
PDM41532
Rev. 1.3 - 4/10/98
3
PRELIMINARY
1
2
3
4
5
6
7
8
9
10
11
12
Operating Mode
NOTE: 1. H = VIH, L = VIL, X = DON’T CARE
Mode
CE
OE
WE
LB
UB
I/O7-I/O0
I/O15-I/O8
Power
Read
L
H
L
Output
ICC
H
L
High Impedance
Output
ICC
L
H
Output
High Impedance
ICC
Write
L
X
L
Input
ICC
H
L
High Impedance
Input
ICC
L
H
Input
High Impedance
ICC
Output Disable
L
H
X
x
High Impedance
ICC
L
X
H
High Impedance
ICC
Standby
H
XXXX
High Impedance
ISB
Absolute Maximum Ratings (1)
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specication is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect reliability.
2. Appropriate thermal calculations should be performed in all cases and specically for
those where the chosen package has a large thermal resistance (e.g., TSOP). The
calculation should be of the form: Tj = Ta + P * θja where Ta is the ambient tempera-
ture, P is average operating power and
θ
ja the thermal resistance of the package. For
this product, use the following
θ
ja values:
SOJ: 59o C/W
TSOP: 87o C/W
Symbol
Rating
Com’l.
Ind.
Unit
VTERM
Terminal Voltage with Respect to VSS
–0.5 to +7.0
V
TBIAS
Temperature Under Bias
–55 to +125
–65 to +135
°C
TSTG
Storage Temperature
–55 to +125
–65 to +150
°C
PT
Power Dissipation
1.5
W
IOUT
DC Output Current
50
mA
Tj
Maximum Junction Temperature (2)
125
145
°C
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