- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384844 > PDM1405HA (NIHON INTER ELECTRONICS CORP) MOSFET MODULE Dual 140A/500V PDF資料下載
參數(shù)資料
| 型號： | PDM1405HA |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | MOSFET MODULE Dual 140A/500V |
| 中文描述： | 100 A, 500 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 70K |
| 代理商： | PDM1405HA |
240
200
160
120
80
40
00
2
4
6
8
10
12
D
D
DRAIN TO SOURCE VOLTAGE V
DS
(V)
T
C
=25
250 s Pulse Test
V
GS
=10V
8V
7V
6V
5V
Fig. 1 Typical Output Characteristics
36
30
24
18
12
6
01
2
DRAIN TO SOURCE VOLTAGE V
DS
(V)
5
10
20
50
100
C
V
GS
=0V f=1MHz
C
iss
Fig. 4 Typical Capacitance
Fig. 4
1000
500
100
200
50
20
102
5
10
20
50
200
100
S
R
G
=5 V
DD
=250V T
C
=25
80 s Pulse Test
t
d
(off)
DRAIN CURRENT I
D
(A)
t
d
(on)
t
r
t
f
Fig. 7 Typical Switching Time
Fig. 7
Vs. Drain Current
500
50
200
100
20
10
5
1
2
0.51
2
5
10
20
50
100
500
200
1000
D
D
DRAIN TO SOURCE VOLTAGE V
DS
(V)
T
C
=25
T
j
=150
MAX Single Pulse
10 s
1ms
10ms
DC
100 s
Operation in this area
is limited by R
DS
(on)
Fig. 10 Maximum Safe Operating Area
12
10
8
6
4
2
00
4
8
12
16
D
D
GATE TO SOURCE VOLTAGE V
GS
(V)
T
C
=25
250 s Pulse Test
I
D
=145A
70A
35A
Fig. 2 Typical Drain-Source On-Voltage
Fig. 2
Vs. Gate-Source Voltage
16
12
8
4
00
300
600
900
1200
1500
1800
G
G
TOTAL GATE CHRAGE Q
g
(nC)
I
D
=100A
V
DD
= 250V
400V
Fig. 5 Typical Gate Charge
Fig. 5
Vs. Gate-Source Voltage
200
160
120
80
40
00
0.4
SOURCE TO DRAIN VOLTAGE V
SD
(V)
0.8
1.2
1.6
2.0
2.4
S
S
250 s Pulse Test
T
j
=125
T
j
=25
Fig. 8 Typical Source-Drain Diode Forward
Fig. 8
Characteristics
0.01
2
1
0.5
0.2
0.1
0.05
0.02
10
-5
10
-4
10
-3
PULSE DURATION t (s)
10
-2
10
-1
1
10
N
T
[
t
/
t
]
Per Unit Base
R
th(j-c)
=0.142
/W
1 Shot Pulse
Fig. 11-1
Normalized Transient Thermal
impedance(MOSFET)
15
12
9
6
3
040
0
40
80
120
160
D
D
JUNCTION TEMPERATURE T
j
(
)
V
GS
=10V 250 s Pulse Test
I
D
=140A
70A
35A
Fig. 3 Typical Drain-Source On Voltage
Fig. 3
Vs. J unction Temperature
10
5
1
2
0.5
0.2
0.12
5
10
20
50
100
200
S
s
I
D
=70A V
DD
=250V T
C
=25
80 s Pulse Test
SERIES GATE IMPEDANCE R
G
(
)
t
d
(off)
t
d
(on)
t
r
t
f
Fig. 6 Typical Switching Time
Fig. 6
Vs. Series Gate impedance
500
200
50
100
20
10
50
100
200
300
400
500
600
R
r
R
R
-dis/dt (A/
s)
t
rr
I
R
I
S
=140A I
S
=100A T
j
=125
Fig. 9 Typical Reverse Recovery Characteristics
0.01
2
1
0.5
0.2
0.1
0.05
0.02
10
-5
10
-4
10
-3
PULSE DURATION t (s)
10
-2
10
-1
1
10
N
T
[
t
/
t
]
Per Unit Base
R
th(j-c)
=1.0
/W
1 Shot Pulse
Fig. 11-2
Normalized Transient Thermal
impedance(DIODE)
M
O
S
F
E
T
-
320
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PDM755HA | MOSFET 75A 500A |
| PDMB400C12 | PDMB400C12 |
| PE-1210FT560KTT | RF CHIP INDUCTORS |
| PE-1210FT561KTT | RF CHIP INDUCTORS |
| PE-1210FT562KTT | RF CHIP INDUCTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PDM1405HA_1 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:140A 500V |
| PDM-16 | 制造商:GAMEWELL-FCI 制造商全稱:GAMEWELL-FCI 功能描述:Serial annunciator driver module, main driver with 16-outputs |
| PDM1602 WH002 | 制造商:Alpha Wire 功能描述:CBL 2COND 16AWG WH 500' |
| PDM1602 WH005 | 制造商:Alpha Wire 功能描述:CBL 2COND 16AWG WH 100' |
| PDM165 | 制造商:Veeder-Root Company 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。