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參數(shù)資料
| 型號： | PD7M440 |
| 廠商： | Nihon Inter Electronics Corporation |
| 英文描述： | MOSFET MODULE |
| 中文描述： | MOSFET的模塊 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 66K |
| 代理商： | PD7M440 |
MOSFET
MODULE
Dual 50A 450V/500V
PD7M441H / PD7M440H
MAXMUM RATINGS
Ratings
Symbol
V
DSS
V
GSS
PD7M441H
450
PD7M440H
500
Unit
V
V
Drain-Source Voltage (V
GS
=0V)
Gate - Source Voltage
+/ - 20
Duty=50%
D.C.
50 (Tc=25
°
C)
35 (Tc=25
°
C)
100 Tc=25
°
C)
350 Tc=25
°
C)
-40 to +150
-40 to +125
2000
3.0
2.0
Continuous Drain Current
I
D
A
Pulsed Drain Current
Total Power Dissipation
Operating J unction Temperature Range
Storage Temperature Range
Isolation Voltage Terminals to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(@Tc=25
°
C unless otherwise noted)
Characteristic
I
DM
P
D
T
jw
T
stg
V
ISO
A
W
°
C
°
C
V
F
TOR
N
m
Symbol
Test Condition
V
DS
=V
DSS
,V
GS
=0V
T
j
=125
°
C, V
DS
=V
DSS
,V
GS
=0V
V
DS
=V
GS
, I
D
=1mA
V
GS
=+/- 20V,V
DS
=0V
V
GS
=10V, I
D
=25A
V
GS
=10V, I
D
=25A
V
DS
=15V, I
D
=25A
Min.
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
3.1
-
110
3.2
45
9.0
1.7
0.32
120
80
240
50
Max.
1.0
4.0
4.0
1.0
120
3.4
-
-
-
-
-
-
-
-
Unit
Zero Gate Voltage Drain Current
I
DSS
mA
Gate-Source Threshold Voltage
Gate-Source Leakage Current
Static Drain-Source On-Resistance
Drain-Source On-Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25
°
C)
Characteristic
Symbol
Continuous Source Current
I
S
Pulsed Source Current
I
SM
Diode Forward Voltage
V
SD
Reverse Recovery Time
t
rr
Reverse Recovery
Q
r
THERMAL CHARACTERISTICS
Characteristic
Symbol
V
GS(th)
I
GSS
r
DS(on)
V
DS(on)
g
fs
C
ies
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
μ
A
m-ohm
V
S
nF
nF
nF
V
DS
=25V,V
GS
=0V,f=1MHz
V
DD
= 1/2V
DSS
I
D
=25A
V
GS
= -5V, +10V
R
G
= 7ohm
ns
Test Condition
Min.
-
-
-
-
-
Typ.
-
-
-
100
0.15
Max.
35
100
1.9
-
-
Unit
A
A
V
ns
μ
C
D.C.
-
I
S
=50A
I
S
=50A, -dis/dt=100A/
μ
s
Test Condition
Min.
-
-
-
Typ.
-
-
-
Max.
0.36
2.0
0.1
Unit
MOS FET
Diode
Mounting surface flat, smooth, and greased
Thermal Resistance, J unction to Case
R
th(j-c)
Thermal Resistance, Case to Heatsink
R
th(c-f)
°
C/W
Dimension(mm)
FEATURES
* Dual MOS FETs Cascaded Circuit
* Prevented Body Diodes of MOSFETs by
SBDs, and Ultra Fast Recovery Diodes
Connected in Parallel
* 300KHz High Speed Switching Possible
TYPICAL APPLICATIONS
* Power Supply for the Communications and
the Induction Heating
Approximate Weight : 220g
OUTLINE DRAWING
Circuit
108.0
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PD7M440H | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:MOSFET MODULE |
| PD7M440H_1 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:50A 450~500V |
| PD7M440L | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:MOSFET MODULE Dual 50A 450V/550V |
| PD7M440L_1 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:50A 450~500V |
| PD7M441H | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:MOSFET MODULE |
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