參數(shù)資料
型號: PD57002-01
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | 250MA I(D) | LLCC
中文描述: 晶體管| MOSFET的| N溝道| 65V的五(巴西)直|毫安(?。﹟ LLCC
文件頁數(shù): 4/4頁
文件大小: 39K
代理商: PD57002-01
PD57002-01
4/4
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PD57002-E 功能描述:射頻MOSFET電源晶體管 POWER RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD57002-E_10 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
PD57002S 功能描述:射頻MOSFET電源晶體管 N-Ch 65 Volt 0.25A RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD57002S-E 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD57006 功能描述:射頻MOSFET電源晶體管 N-Ch 65 Volt 1.0 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray