參數(shù)資料
型號: PCHMB200B12A
廠商: NIHON INTER ELECTRONICS CORP
元件分類: 功率晶體管
英文描述: IGBT MODULE Chopper 200A 1200V
中文描述: 200 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-5
文件頁數(shù): 2/3頁
文件大?。?/td> 121K
代理商: PCHMB200B12A
PCHMB200B12A
0
2
4
6
8
10
0
100
200
300
400
Collector to Emitter Voltage V
CE
V)
C
Fig.1- Output Characteristics Typical)
T
C
=25
10V
9V
12V
15V
V
GE
=20V
8V
7V
0
4
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage V
GE
V)
C
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage Typical)
T
C
=25
200A
I
C
=100A
400A
0
4
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage V
GE
V)
C
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage Typical)
I
C
=100A
200A
400A
T
C
=125
0
2
4
6
8
10
12
14
16
0
300
600
900
1200
1500
0
100
200
300
400
500
600
700
800
Total Gate Charge Qg nC)
C
G
G
Fig.4- Gate Charge vs. Collector to Emitter Voltage Typical)
V
CE
=600V
400V
200V
R
L
=3
Ω
T
C
=25
0.1
0.2
0.5
1
2
5
10
20
50
100
200
100
200
500
1000
2000
5000
10000
20000
50000
100000
Collector to Emitter Voltage V
CE
V)
C
Fig.5- Capacitance vs. Collector to Emitter Voltage Typical)
Cies
Coes
Cres
V
GE
=0V
f=1MH
Z
T
C
=25
0
50
100
150
200
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Collector Current I
C
A)
S
μ
s
Fig.6- Collector Current vs. Switching Time Typical)
t
OFF
t
f
t
r
t
ON
V
CC
=600V
R
G
= 2.0
Ω
V
GE
=
±
15V
T
C
=25
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