參數(shù)資料
型號(hào): PCFMB150E6
廠商: NIHON INTER ELECTRONICS CORP
元件分類: IGBT 晶體管
英文描述: 150 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-5
文件頁數(shù): 2/4頁
文件大?。?/td> 277K
代理商: PCFMB150E6
00
日本インター株式會(huì)社
PCFMB150E6
PCFMB150E6C
01
234
5
0
50
100
150
200
250
300
Collector to Emitter Voltage VCE (V)
Co
lle
ct
or
Cu
rr
en
tI
C
(A
)
Fig.1- Output Characteristics (Typical)
TC=25°C
11V
10V
VGE=20V
9V
8V
12V
15V
01
234
5
0
50
100
150
200
250
300
Collector to Emitter Voltage VCE (V)
Co
lle
ct
or
Cu
rr
en
tI
C
(A
)
Fig.2- Output Characteristics (Typical)
TC=125°C
11V
10V
VGE=20V
9V
8V
12V
15V
04
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
C
ol
le
ct
or
to
E
m
itter
V
ol
tag
eV
CE
(V
)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
IC=60A
300A
150A
04
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
C
ol
lec
to
r
to
E
m
itt
er
V
olt
ag
eV
CE
(V
)
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
IC=60A
300A
TC=125°C
150A
0
100
200
300
400
500
600
0
50
100
150
200
250
300
350
400
Total Gate Charge Qg (nC)
C
ol
le
ctor
to
E
m
itter
V
ol
ta
ge
V
CE
(V
)
G
ate
to
E
m
itte
rV
olt
ag
eV
GE
(V
)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
0
2
4
6
8
10
12
14
16
VCE=300V
200V
100V
RL=2.0
TC=25°C
0.1
0.2
0.5
1
2
5
10
20
50
100
200
100
300
1000
3000
10000
30000
100000
Collector to Emitter Voltage VCE (V)
C
apac
itan
ce
C
(
pF
)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
Cies
Coes
Cres
VGE=0V
f=1MHZ
TC=25°C
相關(guān)PDF資料
PDF描述
PCH-27-823 1 ELEMENT, 82 uH, GENERAL PURPOSE INDUCTOR
PCH-27-124 NOT RoHS. Power inductor, 10% tol (add 'L' for compliant version)
PCH-27-125 NOT RoHS. Power inductor, 10% tol (add 'L' for compliant version)
PCH-27-126 NOT RoHS. Power inductor, 10% tol (add 'L' for compliant version)
PCH-27-153 NOT RoHS. Power inductor, 10% tol (add 'L' for compliant version)
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